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? 2002 microchip technology inc. ds21425b-page 1 m tc4467/tc4468/tc4469 features ? high peak output current: 1.2 a ? wide operating range: - 4.5 v to 18 v ? symmetrical rise/fall times: 25 nsec ? short, equal delay times: 75 nsec ? latch-proof. will withstand 500 ma inductive kickback ? 3 input logic choices: - and / nand / and + inv ? esd protection on all pins: 2 kv applications ? general purpose cmos logic buffer ? driving all four mosfets in an h-bridge ? direct small motor driver ? relay or peripheral drivers ? ccd driver ? pin-switching network driver package types general description the tc4467/tc4468/tc4469 devices are a family of four-output cmos buffers/mosfet drivers with 1.2 a peak drive capability. unlike other mosfet drivers, these devices have two inputs for each output. the inputs are configured as logic gates: nand (tc4467), and (tc4468) and and/inv (tc4469). the tc4467/tc4468/tc4469 drivers can continuously source up to 250 ma into ground referenced loads. these devices are ideal for direct driving low current motors or driving mosfets in a h-bridge configuration for higher current motor drive (see section 5.0 for details). having the logic gates onboard the driver can help to reduce component count in many designs. the tc4467/tc4468/tc4469 devices are very robust and highly latch-up resistant. they can tolerate up to 5 v of noise spiking on the ground line and can handle up to 0.5 a of reverse current on the driver outputs. the tc4467/4468/4469 devices are available in commercial, industrial and military temperature ranges. 1 2 3 4 5 6 7 8 16 13 12 11 10 9 1a 1b 2a 2b 3a 3b gnd gnd v dd 1y 2y 3y 4y 4b 4a v dd 15 14 tc4467 tc4468 tc4469 16-pin soic (wide) 1 2 3 4 5 6 7 14 13 12 11 10 9 8 1a 1b 2a 2b 3a 3b gnd v dd 1y 2y 3y 4y 4b 4a tc4467 tc4468 tc4469 14-pin pdip/cerdip logic-input cmos quad drivers
tc4467/tc4468/tc4469 ds21425b-page 2 ? 2002 microchip technology inc. logic diagrams tc4468 tc4467 output tc446x v dd 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a gnd tc4469 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a gnd v dd v dd v dd 6 gnd
? 2002 microchip technology inc. ds21425b-page 3 tc4467/tc4468/tc4469 1.0 electrical characteristics absolute maximum ratings? supply voltage ...............................................................+20 v input voltage ............................. (gnd ? 5 v) to (v dd + 0.3 v) package power dissipation: (t a 70c) pdip...................................................................800 mw cerdip .............................................................840 mw soic ..................................................................760 mw package thermal resistance: cerdip r j-a ...................................................100c/w cerdip r j-c .....................................................23c/w pdip r j-a ..........................................................80c/w pdip r j-c ..........................................................35c/w soic r j-a ..........................................................95c/w soic r j-c ..........................................................28c/w operating temperature range: c version ................................................... 0c to +70c e version.................................................-40c to +85c m version ..............................................-55c to +125c maximum chip temperature ....................................... +150c storage temperature range.........................-65c to +150c ?notice: stresses above those listed under "maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. electrical specifications electrical characteristics: unless otherwise noted, t a = +25c, with 4.5 v v dd 18 v. parameters sym min typ max units conditions input logic 1, high input voltage v ih 2.4 ? v dd v note 3 logic 0, low input voltage v il ??0.8v note 3 input current i in -1.0 ? +1.0 a 0 v v in v dd output high output voltage v oh v dd ? 0.025 ? ? v i load = 100 a (note 1) low output voltage v ol ? ? 0.15 v i load = 10 ma (note 1) output resistance r o ?1015 ? i out = 10 ma, v dd = 18 v peak output current i pk ?1.2?a continuous output current i dc ? ? 300 ma single output ? ? 500 total package latch-up protection withstand reverse current i?500?ma4.5v v dd 16 v switching time (note 1) rise time t r ? 15 25 nsec figure 4-1 fall time t f ? 15 25 nsec figure 4-1 delay time t d1 ? 40 75 nsec figure 4-1 delay time t d2 ? 40 75 nsec figure 4-1 power supply power supply current i s ?1.54ma power supply voltage v dd 4.5 ? 18 v note 2 note 1: totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one dri ver to drive high a few nanoseconds before another. the resulting current spike, although short, may decrease the life of the device. switching times are ensured by design. 2: when driving all four outputs simultaneously in the same direction, v dd will be limited to 16 v. this reduces the chance that internal dv/dt will cause high-power dissipation in the device. 3: the input threshold has approximately 50 mv of hysteresis centered at approximately 1.5 v. input rise times should be kept below 5sec to avoid high internal peak currents during input transitions. static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "electrical characteristics" to avoid increased power dissipation in the device.
tc4467/tc4468/tc4469 ds21425b-page 4 ? 2002 microchip technology inc. electrical specifications (operating temperatures) truth table electrical characteristics: unless otherwise noted, over operating temperature range with 4.5 v v dd 18 v. parameters sym min typ max units conditions input logic 1, high input voltage v ih 2.4 ? ? v note 3 logic 0, low input voltage v il ??0.8v note 3 input current i in -10 ? 10 a 0 v v in v dd output high output voltage v oh v dd ? 0.025 ? ? v i load = 100 a (note 1) low output voltage v ol ? ? 0.30 v i load = 10 ma (note 1) output resistance r o ?2030 ? i out = 10 ma, v dd = 18 v peak output current i pk ?1.2?a continuous output current i dc ? ? 300 ma single output ? ? 500 total package latch-up protection withstand reverse current i?500?ma4.5v v dd 16 v switching time (note 1) rise time t r ? 15 50 nsec figure 4-1 fall time t f ? 15 50 nsec figure 4-1 delay time t d1 ? 40 100 nsec figure 4-1 delay time t d2 ? 40 100 nsec figure 4-1 power supply power supply current i s ??8ma power supply voltage v dd 4.5 ? 18 v note 2 note 1: totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one dri ver to drive high a few nanoseconds before another. the resulting current spike, although short, may decrease the life of the device. switching times are ensured by design. 2: when driving all four outputs simultaneously in the same direction, v dd will be limited to 16 v. this reduces the chance that internal dv/dt will cause high-power dissipation in the device. 3: the input threshold has approximately 50 mv of hysteresis centered at approximately 1.5 v. input rise times should be kept below 5 sec to avoid high internal peak currents during input transitions. static input levels should also be maintained above the maximum, or below the minimum, input levels specified in the "electrical characteristics" to avoid increased power dissipation in the device. part no. tc4467 nand tc4468 and tc4469 and/inv inputs a h h l l h h l l h h l l inputs b hlhlhlhlhlhl outputs tc446x l h h h h l l l l h l l legend: h = high l = low
? 2002 microchip technology inc. ds21425b-page 5 tc4467/tc4468/tc4469 2.0 typical performance curves note: t a = +25c, with 4.5 v v dd 18 v. figure 2-1: rise time vs. supply voltage. figure 2-2: rise time vs. capacitive load. figure 2-3: rise/fall times vs. temperature. figure 2-4: fall time vs. supply voltage. figure 2-5: fall time vs. capacitive load. figure 2-6: propagation delay time vs. supply voltage. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 14 0 12 0 1 00 80 60 4 0 2 0 0 3 5 7 9 11 1 3 1 5 17 1 9 2200 pf 0 p p 1600 pf 1000 pf 470 pf 100 pf t r i se ( nsec ) v su ppl y ( v ) 14 0 12 0 1 00 80 60 4 0 2 0 0 1 00 1 000 10 , 00 0 10 v 15 v v v v 5 v t r i se ( nsec ) c l o a d ( pf ) 0 - 50 time ( nsec ) 5 1 0 1 5 2 0 2 5 -2 5 0 2 5 50 7 5 1 00 12 5 t fall t rise v su ppl y = 17. 5 v c l o a d = 470 pf temperature ( c ) 14 0 12 0 1 00 80 60 4 0 2 0 0 3 5 7 9 11 1 3 1 5 17 1 9 p 100 pf 470 pf 1000 pf 1500 p f 2200 pf t fall ( nsec ) v su ppl y (v ) 14 0 12 0 1 00 80 60 4 0 2 0 0 100 0 0 1 000 10 , 00 0 v v v 5 v 10 v 15 v t fall ( nsec ) c l o a d ( pf ) 0 4 d elay time ( nsec ) 2 0 4 0 60 80 8 1 2 14 1 6 1 8 6 1 0 v su ppl y ( v ) t t d1 t d2 c c l o a d 4 70 pf = 4
tc4467/tc4468/tc4469 ds21425b-page 6 ? 2002 microchip technology inc. 2.0 typical performance curves (continued) note: t a = +25c, with 4.5 v v dd 18 v. figure 2-7: input amplitude vs. delay times. figure 2-8: quiescent supply current vs. supply voltage. figure 2-9: high-state output resistance. figure 2-10: propagation delay times vs. temperatures. figure 2-11: quiescent supply current vs. temperature. figure 2-12: low-state output resistance. 14 0 12 0 1 00 80 60 4 0 2 0 0 1 9 1 0 d elay time ( nsec ) 2 3 4 5 6 7 8 inp u t fallin g inp u t ri s in g v drive ( v ) t d1 t d2 v dd v = 12 v 0 4 0 . 5 1. 0 1. 5 2. 0 2. 5 6 8 1 0 12 14 1 6 1 8 ou tp u t s = 1 outputs = 0 v su ppl y (v ) i q uiescent ( ma ) 0 4 6 8 1 0 12 14 1 6 1 8 v su ppl y ( v ) 5 1 0 1 5 2 0 2 5 30 35 r d s ( on ) ( ? ) t j = +1 50 c t j = +25 c 7 0 2 0 1 00 12 0 d elay time ( nsec ) -4 0 -2 0 0 2 0 4 0 60 80 30 4 0 50 60 - 60 c ) v dd = 17. 5 v = 470 pf v in t d1 t d2 3 . 5 0 1 00 12 0 -4 0 -2 0 0 2 0 4 0 60 80 3 . 0 2. 5 2. 0 1. 5 1. 0 0 . 5 ou tp u t s = 1 outputs = 0 - 60 i q uiescent (ma) t j u n c ti on ( c ) v v dd = 17. 5 v 0 4 6 8 1 0 12 1 4 1 6 1 8 5 1 0 1 5 2 0 2 5 30 35 v su ppl y ( v ) r d s ( on ) ( ? ) t j = +150 c t j = +2 5 c
? 2002 microchip technology inc. ds21425b-page 7 tc4467/tc4468/tc4469 2.0 typical performance curves (continued) note: (load on single output only). figure 2-13: supply current vs. capacitive load. figure 2-14: supply current vs. capacitive load. figure 2-15: supply current vs. capacitive load. figure 2-16: supply current vs. frequency. figure 2-17: supply current vs. frequency. figure 2-18: supply current vs. frequency. 60 0 1 00 1 000 10 , 00 0 50 4 0 30 2 0 1 0 2mh hz 1 mhz 1 mhz 1mh 50 00 kh z 2 00 kh z 2 0 kh z i su pply ( ma ) c l o a d ( pf ) v dd = 1 8 v 60 0 1 00 1 000 10 , 00 0 50 4 0 30 2 0 1 0 2mhz 2mhz 1 mhz 5 00 kh z 2 00 kh z 2 0 kh z c l o a d ( pf ) i su pply ( ma ) v dd v = 12 v 60 50 4 0 30 2 0 1 0 0 1 00 1 000 10 , 00 0 1 mhz 500 kh z 2 00 kh z 2 0 kh z 2 mhz i su pply ( ma ) c l o a d (p f ) v v dd v = 6 v 60 0 1 00 1 000 frequency ( khz ) 50 4 0 30 2 0 1 0 2200 pf 1 1 000 pf p 100 pf 1 0 10 , 00 0 v dd = 1 8 v i su pply ( ma ) 60 0 1 0 1 00 frequency ( khz ) 50 4 0 30 2 0 1 0 1 000 2200 pf p p 1000 pf 100 pf 10 , 00 0 i su pply ( ma ) v dd v = 12 v 60 0 1 0 1 000 1 00 frequency ( khz ) 50 4 0 30 2 0 1 0 2200 pf 1000 pf 100 pf 10 , 00 0 i su pply ( ma ) v v dd = 6 v
tc4467/tc4468/tc4469 ds21425b-page 8 ? 2002 microchip technology inc. 3.0 pin descriptions the descriptions of the pins are listed in table 3-1. table 3-1: pin function table 14-pin pdip, cerdip 16-pin soic (wide) description symbol symbol 1a 1a input a for driver 1, ttl/cmos compatible input 1b 1b input b for driver 1, ttl/cmos compatible input 2a 2a input a for driver 2, ttl/cmos compatible input 2b 2b input b for driver 2, ttl/cmos compatible input 3a 3a input a for driver 3, ttl/cmos compatible input 3b 3b input b for driver 3, ttl/cmos compatible input gnd gnd ground ? gnd ground 4a 4a input a for driver 4, ttl/cmos compatible input 4b 4b input b for driver 4, ttl/cmos compatible input 4y 4y output for driver 4, cmos push-pull output 3y 3y output for driver 3, cmos push-pull output 2y 2y output for driver 2, cmos push-pull output 1y 1y output for driver 1, cmos push-pull output v dd v dd supply input, 4.5 v to 18 v ?v dd supply input, 4.5 v to 18 v
? 2002 microchip technology inc. ds21425b-page 9 tc4467/tc4468/tc4469 4.0 detailed description 4.1 supply bypassing large currents are required to charge and discharge large capacitive loads quickly. for example, charging a 1000 pf load to 18 v in 25 nsec requires 0.72 a from the device's power supply. to ensure low supply impedance over a wide frequency range, a 1 f film capacitor in parallel with one or two low-inductance, 0.1 f ceramic disk capacitors with short lead lengths (<0.5 in.) normally provide adequate bypassing. 4.2 grounding the tc4467 and tc4469 contain inverting drivers. potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. instead, individual ground returns for input and output circuits, or a ground plane, should be used. 4.3 input stage the input voltage level changes the no-load or quiescent supply current. the n-channel mosfet input stage transistor drives a 2.5 ma current source load. with logic ? 0 ? outputs, maximum quiescent supply current is 4 ma. logic ? 1 ? output level signals reduce quiescent current to 1.4 ma, maximum. unused driver inputs must be connected to v dd or v ss . minimum power dissipation occurs for logic ? 1 ? outputs. the drivers are designed with 50 mv of hysteresis, which provides clean transitions and minimizes output stage current spiking when changing states. input volt- age thresholds are approximately 1.5 v, making any voltage greater than 1.5 v, up to v dd , a logic ? 1 ? input. input current is less than 1 a over this range. 4.4 power dissipation the supply current versus frequency and supply current versus capacitive load characteristic curves will aid in determining power dissipation calculations. microchip technology's cmos drivers have greatly reduced quiescent dc power consumption. input signal duty cycle, power supply voltage and load type influence package power dissipation. given power dissipation and package thermal resistance, the maxi- mum ambient operating temperature is easily calculated. the 14-pin plastic package junction-to- ambient thermal resistance is 83.3c/w. at +70c, the package is rated at 800 mw maximum dissipation. maximum allowable chip temperature is +150c. three components make up total package power dissipation: 1. load-caused dissipation (p l ). 2. quiescent power (p q ). 3. transition power (p t ). a capacitive-load-caused dissipation (driving mosfet gates), is a direct function of frequency, capacitive load and supply voltage. the power dissipation is: equation a resistive-load-caused dissipation for ground- referenced loads is a function of duty cycle, load current and load voltage. the power dissipation is: equation p l fcv s 2 = v s supply voltage = c capacitive load = f switching frequency = p l dv s v l ? () i l = i l load current = dduty cycle = v s supply voltage = v l load voltage =
tc4467/tc4468/tc4469 ds21425b-page 10 ? 2002 microchip technology inc. a resistive-load-caused dissipation for supply- referenced loads is a function of duty cycle, load current and output voltage. the power dissipation is equation quiescent power dissipation depends on input signal duty cycle. logic high outputs result in a lower power dissipation mode, with only 0.6 ma total current drain (all devices driven). logic low outputs raise the current to 4 ma maximum. the quiescent power dissipation is: equation transition power dissipation arises in the complimen- tary configuration (tc446x) because the output stage n-channel and p-channel mos transistors are on simultaneously for a very short period when the output changes. the transition power dissipation is approximately: equation package power dissipation is the sum of load, quiescent and transition power dissipations. an example shows the relative magnitude for each term: maximum operating temperature is: equation figure 4-1: switching time test circuit. p l dv o i l = i l load current = v o device output voltage = dduty cycle = p q v s di h () () () ( ) ( ) note: ambient operating temperature should not exceed +85c for "ejd" device or +125c for "mjd" device. p t fv s 10 10 9 ? () () ( ) ( ) v out 470 pf 1b 1a 2b 2a 3b 3a 4b 4a 1 f film 0.1 f ceramic 90% 10% 10% 10% 90% +5 v input (a, b) v dd output 0v 0v 90% 1 2 3 4 5 6 8 9 7 10 11 12 13 14 v dd t r t d1 t f t d2 input: 100 khz, square wave, t rise = t fall 10 nsec
? 2002 microchip technology inc. ds21425b-page 11 tc4467/tc4468/tc4469 5.0 applications information figure 5-1: stepper motor drive. figure 5-2: quad driver for h-bridge motor control. +12 v 14 tc4469 13 12 11 10 7 9 8 6 5 4 3 2 1 red gray ye l blk motor b a airpax #m82102-p2 7.5/step 5 13 +5 v to +15 v 14 tc4469 direction pwm speed 18 v fwd 13 12 11 10 7 9 8 6 5 4 3 2 1 rev motor m
tc4467/tc4468/tc4469 ds21425b-page 12 ? 2002 microchip technology inc. 6.0 packaging information 6.1 package marking information 14-lead pdip (300 mil) example: 14-lead cerdip (300 mil) example: legend: xx...x customer specific information* yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * standard otp marking consists of microchip part number, year code, week code, facility code, mask rev#, and assembly code. 16-lead soic (300 mil) example : xxxxxxxxxxx xxxxxxxxxxx yywwnnn xxxxxxxxxxx yywwnnn tc4469coe xxxxxxxxxxxxxx xxxxxxxxxxxxxx yywwnnn xxxxxxxxxxxxxx xxxxxxxxxxxxxx yywwnnn tc4467cpd yywwnnn tc4468ejd yywwnnn
? 2002 microchip technology inc. ds21425b-page 13 tc4467/tc4468/tc4469 14-lead plastic dual in-line (p) ? 300 mil (pdip) e1 n d 1 2 eb e c a a1 b b1 l a2 p units inches* millimeters dimension limits min nom max min nom max number of pins n 14 14 pitch p .100 2.54 top to seating plane a .140 .155 .170 3.56 3.94 4.32 molded package thickness a2 .115 .130 .145 2.92 3.30 3.68 base to seating plane a1 .015 0.38 shoulder to shoulder width e .300 .313 .325 7.62 7.94 8.26 molded package width e1 .240 .250 .260 6.10 6.35 6.60 overall length d .740 .750 .760 18.80 19.05 19.30 tip to seating plane l .125 .130 .135 3.18 3.30 3.43 lead thickness c .008 .012 .015 0.20 0.29 0.38 upper lead width b1 .045 .058 .070 1.14 1.46 1.78 lower lead width b .014 .018 .022 0.36 0.46 0.56 overall row spacing eb .310 .370 .430 7.87 9.40 10.92 mold draft angle top 5 10 15 5 10 15 5 10 15 5 10 15 mold draft angle bottom * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: ms-001 drawing no. c04-005 significant characteristic
tc4467/tc4468/tc4469 ds21425b-page 14 ? 2002 microchip technology inc. 14-lead ceramic dual in-line ? 300 mil (cerdip) .780 (19.81) .740 (18.80) .300 (7.62) .230 (5.84) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18) .110 (2.79) .090 (2.29) .065 (1.65) .045 (1.14) .020 (0.51) .016 (0.41) .040 (1.02) .020 (0.51) .098 (2.49) max. .030 (0.76) min. 14-pin cerdip (narrow) .400 (10.16) .320 (8.13) .015 (0.38) .008 (0.20) 3 min. pin 1 .320 (8.13) .290 (7.37) .150 (3.81) min. dimensions: inches (mm)
? 2002 microchip technology inc. ds21425b-page 15 tc4467/tc4468/tc4469 16-lead plastic small outline (so) ? wide, 300 mil (soic) foot angle 048048 15 12 0 15 12 0 mold draft angle bottom 15 12 0 15 12 0 mold draft angle top 0.51 0.42 0.36 .020 .017 .014 b lead width 0.33 0.28 0.23 .013 .011 .009 c lead thickness 1.27 0.84 0.41 .050 .033 .016 l foot length 0.74 0.50 0.25 .029 .020 .010 h chamfer distance 10.49 10.30 10.10 .413 .406 .398 d overall length 7.59 7.49 7.39 .299 .295 .291 e1 molded package width 10.67 10.34 10.01 .420 .407 .394 e overall width 0.30 0.20 0.10 .012 .008 .004 a1 standoff 2.39 2.31 2.24 .094 .091 .088 a2 molded package thickness 2.64 2.50 2.36 .104 .099 .093 a overall height 1.27 .050 p pitch 16 16 n number of pins max nom min max nom min dimension limits millimeters inches* units l c h 45 1 2 d p n b e1 e a2 a1 a * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: ms-013 drawing no. c04-102 significant characteristic
tc4467/tc4468/tc4469 ds21425b-page 16 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21425b-page17 tc4467/tc4468/tc4469 on-line support microchip provides on-line support on the microchip world wide web (www) site. the web site is used by microchip as a means to make files and information easily available to customers. to view the site, the user must have access to the internet and a web browser, such as netscape or microsoft explorer. files are also available for ftp download from our ftp site. connecting to the microchip internet web site the microchip web site is available by using your favorite internet browser to attach to: www.microchip.com the file transfer site is available by using an ftp ser- vice to connect to: ftp://ftp.microchip.com the web site and file transfer site provide a variety of services. users may download files for the latest development tools, data sheets, application notes, user's guides, articles and sample programs. a vari- ety of microchip specific business information is also available, including listings of microchip sales offices, distributors and factory representatives. other data available for consideration is: ? latest microchip press releases ? technical support section with frequently asked questions ? design tips ? device errata ? job postings ? microchip consultant program member listing ? links to other useful web sites related to microchip products ? conferences for products, development systems, technical information and more ? listing of seminars and events systems information and upgrade hot line the systems information and upgrade line provides system users a listing of the latest versions of all of microchip's development systems software products. plus, this line provides information on how customers can receive any currently available upgrade kits.the hot line numbers are: 1-800-755-2345 for u.s. and most of canada, and 1-480-792-7302 for the rest of the world. 013001
tc4467/tc4468/tc4469 ds21425b-page18 ? 2002 microchip technology inc. reader response it is our intention to provide you with the best documentation possible to ensure successful use of your microchip prod- uct. if you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please fax your comments to the technical publications manager at (480) 792-4150. please list the following information, and use this outline to provide us with your comments about this data sheet. 1. what are the best features of this document? 2. how does this document meet your hardware and software development needs? 3. do you find the organization of this data sheet easy to follow? if not, why? 4. what additions to the data sheet do you think would enhance the structure and subject? 5. what deletions from the data sheet could be made without affecting the overall usefulness? 6. is there any incorrect or misleading information (what and where)? 7. how would you improve this document? 8. how would you improve our software, systems, and silicon products? to : technical publications manager re: reader response total pages sent from: name company address city / state / zip / country telephone: (_______) _________ - _________ application (optional): would you like a reply? y n device: literature number: questions: fax: (______) _________ - _________ ds21425b tc4467/tc4468/tc4469
? 2002 microchip technology inc. ds21425b-page19 tc4467/tc4468/tc4469 product identification system to order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. sales and support data sheets products supported by a preliminary data sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. to determine if an errata sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip corporate literature center u.s. fax: (480) 792-7277 3. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products. part no. x xx package temperature range device device: tc4467: 1.2a quad mosfet driver, nand tc4468: 1.2a quad mosfet driver, and tc4469: 1.2a quad mosfet driver, and/inv temperature range: c = 0 c to +70 c e= -40 c to +85 c (cerdip only) m= -55 c to +125 c (cerdip only) package: pd = plastic dip, (300 mil body), 14-lead jd = ceramic dip, (300 mil body), 14-lead oe = soic (wide), 16-lead oe713 = soic (wide), 16-lead (tape and reel) examples: a) tc4467coe: commerical temperature, soic package. b) tc4467cpd: commercial temperature, pdip package. c) tc4467mjd: military temperature, ceramic dip package. a) TC4468COE713: tape and reel, commerical temp., soic package. b) tc4468cpd: commercial temperature, pdip package. a) tc4469coe: commercial temperature, soic package. b) tc4469cpd: commercial temperature, pdip package.
tc4467/tc4468/tc4469 ds21425b-page 20 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21425b-page 21 tc4467/tc4468/tc4469 information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warranty is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchip?s products as critical com- ponents in life support systems is not authorized except with express written approval by microchip. no licenses are con- veyed, implicitly or otherwise, under any intellectual property rights. trademarks the microchip name and logo, the microchip logo, filterlab, k ee l oq , microid, mplab, mxdev, pic, picmicro, picmaster, picstart, pro mate, seeval and the embedded control solutions company are registered trade- marks of microchip technology incorporated in the u.s.a. and other countries. dspic, dspicdem.net, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, microport, migratable memory, mpasm, mplib, mplink, mpsim, mxlab, picc, picdem, picdem.net, rfpic, select mode and total endurance are trademarks of microchip technology incorporated in the u.s.a. serialized quick turn programming (sqtp) is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2002, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. microchip received qs-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona in july 1999 and mountain view, california in march 2002. the company?s quality system processes and procedures are qs-9000 compliant for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperipherals, non-volatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001 certified.
ds21425b-page 22 ? 2002 microchip technology inc. m americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: 480-792-7627 web address: http://www.microchip.com rocky mountain 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7966 fax: 480-792-4338 atlanta 500 sugar mill road, suite 200b atlanta, ga 30350 tel: 770-640-0034 fax: 770-640-0307 boston 2 lan drive, suite 120 westford, ma 01886 tel: 978-692-3848 fax: 978-692-3821 chicago 333 pierce road, suite 180 itasca, il 60143 tel: 630-285-0071 fax: 630-285-0075 dallas 4570 westgrove drive, suite 160 addison, tx 75001 tel: 972-818-7423 fax: 972-818-2924 detroit tri-atria office building 32255 northwestern highway, suite 190 farmington hills, mi 48334 tel: 248-538-2250 fax: 248-538-2260 kokomo 2767 s. albright road kokomo, indiana 46902 tel: 765-864-8360 fax: 765-864-8387 los angeles 18201 von karman, suite 1090 irvine, ca 92612 tel: 949-263-1888 fax: 949-263-1338 new york 150 motor parkway, suite 202 hauppauge, ny 11788 tel: 631-273-5305 fax: 631-273-5335 san jose microchip technology inc. 2107 north first street, suite 590 san jose, ca 95131 tel: 408-436-7950 fax: 408-436-7955 toronto 6285 northam drive, suite 108 mississauga, ontario l4v 1x5, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific australia microchip technology australia pty ltd suite 22, 41 rawson street epping 2121, nsw australia tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing microchip technology consulting (shanghai) co., ltd., beijing liaison office unit 915 bei hai wan tai bldg. no. 6 chaoyangmen beidajie beijing, 100027, no. china tel: 86-10-85282100 fax: 86-10-85282104 china - chengdu microchip technology consulting (shanghai) co., ltd., chengdu liaison office rm. 2401, 24th floor, ming xing financial tower no. 88 tidu street chengdu 610016, china tel: 86-28-86766200 fax: 86-28-86766599 china - fuzhou microchip technology consulting (shanghai) co., ltd., fuzhou liaison office unit 28f, world trade plaza no. 71 wusi road fuzhou 350001, china tel: 86-591-7503506 fax: 86-591-7503521 china - shanghai microchip technology consulting (shanghai) co., ltd. room 701, bldg. b far east international plaza no. 317 xian xia road shanghai, 200051 tel: 86-21-6275-5700 fax: 86-21-6275-5060 china - shenzhen microchip technology consulting (shanghai) co., ltd., shenzhen liaison office rm. 1315, 13/f, shenzhen kerry centre, renminnan lu shenzhen 518001, china tel: 86-755-2350361 fax: 86-755-2366086 china - hong kong sar microchip technology hongkong ltd. unit 901-6, tower 2, metroplaza 223 hing fong road kwai fong, n.t., hong kong tel: 852-2401-1200 fax: 852-2401-3431 india microchip technology inc. india liaison office divyasree chambers 1 floor, wing a (a3/a4) no. 11, o?shaugnessey road bangalore, 560 025, india tel: 91-80-2290061 fax: 91-80-2290062 japan microchip technology japan k.k. benex s-1 6f 3-18-20, shinyokohama kohoku-ku, yokohama-shi kanagawa, 222-0033, japan tel: 81-45-471- 6166 fax: 81-45-471-6122 korea microchip technology korea 168-1, youngbo bldg. 3 floor samsung-dong, kangnam-ku seoul, korea 135-882 tel: 82-2-554-7200 fax: 82-2-558-5934 singapore microchip technology singapore pte ltd. 200 middle road #07-02 prime centre singapore, 188980 tel: 65-6334-8870 fax: 65-6334-8850 ta iw a n microchip technology (barbados) inc., taiwan branch 11f-3, no. 207 tung hua north road taipei, 105, taiwan tel: 886-2-2717-7175 fax: 886-2-2545-0139 europe denmark microchip technology nordic aps regus business centre lautrup hoj 1-3 ballerup dk-2750 denmark tel: 45 4420 9895 fax: 45 4420 9910 france microchip technology sarl parc d?activite du moulin de massy 43 rue du saule trapu batiment a - ler etage 91300 massy, france tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany microchip technology gmbh gustav-heinemann ring 125 d-81739 munich, germany tel: 49-89-627-144 0 fax: 49-89-627-144-44 italy microchip technology srl centro direzionale colleoni palazzo taurus 1 v. le colleoni 1 20041 agrate brianza milan, italy tel: 39-039-65791-1 fax: 39-039-6899883 united kingdom microchip ltd. 505 eskdale road winnersh triangle wokingham berkshire, england rg41 5tu tel: 44 118 921 5869 fax: 44-118 921-5820 austria microchip technology austria gmbh durisolstrasse 2 a-4600 wels austria tel: 43-7242-2244-399 fax: 43-7242-2244-393 05/16/02 w orldwide s ales and s ervice

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